2SA1179 - TRANSISTOR

Jiangsu Changjiang Electronics

Key Features

. High breakdown voltage.

2SA1179 transistor by Jiangsu Changjiang Electronics - Datasheet Preview

Datasheet Details

Part number	2SA1179
Manufacturer	Jiangsu Changjiang Electronics
File Size	87.58 KB
Description	TRANSISTOR
Datasheet	2SA1179 Datasheet

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www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR (PNP) Plastic-Encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Value -55 -50 -5 -150 200 -55-125 Units V V V mA mW ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.