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2SA1179N - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Miniature package facilitates miniaturization in end products.
  • High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features • Miniature package facilitates miniaturization in end products. • High breakdown voltage.