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Sanyo Electric Components Datasheet

2SA1290 Datasheet

PNP/NPN Transistors

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Ordering number:ENN1200D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1290/2SC3254
60V/7A High-Speed Switching Applications
Applications
· Various inductance lamp drivers for electrical
equipment.
· Inverters, converters (strobo, flash, fluorescent lamp
lighting circuit).
· Power amp (high power car stereo, motor controller).
· High-speed switching (switching regulator, driver).
Package Dimensions
unit:mm
2010C
[2SA1290/2SC3254]
10.2
3.6 5.1
4.5
1.3
Features
· Low saturation voltage.
· Excellent current dependence of hFE.
· Short switching time.
( ) : 2SA1290
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)2V, IC=(–)1A
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)1A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)3.5A, IB=(–)0.175A
* : The 2SA1290/2SC3254 are classified by 1A hFE as follows
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
1.2
0.8
123
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Ratings
(–)80
(–)60
(–)5
(–)7
(–)10
35
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 mA
(–)0.1 mA
70* 280*
100 MHz
(–)0.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/D051MH, (KOTO) No.1200-1/4


Sanyo Electric Components Datasheet

2SA1290 Datasheet

PNP/NPN Transistors

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SA1290/2SC3254
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
RB
INPUT
VR IB2
50
OUTPUT
RL
6.67
+
100µF
+
470µF
VBE=--5V
VCC=20V
20IB1=--20IB2=IC=3A
(For PNP, the polarity is reversed.)
Ratings
min typ
(–)80
(–)60
(–)5
0.1
0.5
0.1
max
Unit
V
V
V
µs
µs
µs
--8 IC -- VBE
2SA1290
--7 VCE=--2V
--6
--5
--4
--3
--2
--1
00
1000
7
5
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR03183
hFE -- IC
2SA1290
VCE=--2V
3 Ta=120°C
2 25°C
100 --40°C
7
5
3
2
10
7
5
--0.01 2 3
5 7--0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
5 7 --10 2
ITR03185
8 IC -- VBE
2SC3254
7 VCE=2V
6
5
4
3
2
1
0
0
1000
7
5
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR03184
hFE -- IC
2SC3254
VCE=2V
3
2 Ta=120°C
25°C
100 --40°C
7
5
3
2
10
7
5
0.01
23
5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A
5 7 10 2
ITR03186
No.1200-2/4


Part Number 2SA1290
Description PNP/NPN Transistors
Maker Sanyo Semicon Device
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2SA1290 Datasheet PDF





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