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Sanyo Electric Components Datasheet

2SB631K Datasheet

PNP/NPN Epitaxial Planar Silicon Transistor

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Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High
current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
( ) : 2SB631, 631K
1 : Emitter
2 : Collector
3 : Base
Specifications
JEDEC : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Tc=25˚C
2SB631, D600
(–)100
(–)100
2SB631K, D600K
(–)120
(–)120
(–)5
(–)1
(–)2
1
8
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=
V(BR)EBO
ICBO
IEBO
IE=(–)10µA, IC=0
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
B631, D600
B631K, D600K
B631, D600
B631K, D600K
Ratings
min typ
(–)100
(–)120
(–)100
(–)120
(–)5
max
(–)1
(–)1
Unit
V
V
V
V
V
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4


Sanyo Electric Components Datasheet

2SB631K Datasheet

PNP/NPN Epitaxial Planar Silicon Transistor

No Preview Available !

2SB631, 631K/2SD600, 600K
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Fall Time
Turn-OFF Time
Storage Time
Symbol
Conditions
hFE1
hFE2
fT
VCE=(–)5V, IC=(–)50mA
VCE=(–)5V, IC=(–)500mA
VCE=(–)10V, IC=(–)50mA
Cob
VCE(sat)
VBE(sat)
tf
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
See specified Test Circuit
toff See specified Test Circuit
tstg See specified Test Circuit
* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
60 D 120 100 E 200 160 F 320
Switching Time Test Circuit
Ratings
min typ
60*
20
(110)
130
(30)20
(–)0.15
(–)0.85
(80)
100
(100)
500
(600)
700
max
320*
(–)0.4
(–)1.2
Unit
MHz
MHz
pF
V
V
ns
ns
ns
ns
ns
ns
No.346–2/4


Part Number 2SB631K
Description PNP/NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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2SB631K Datasheet PDF






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