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Sanyo Electric Components Datasheet

2SC3294 Datasheet

NPN Planar Silicon Transistor

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Ordering number:EN1422C
NPN Planar Silicon Transistor
2SC3294
Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm
2010C
Features
· High DC current gain.
· Large current capacity and wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
process.
· High inductive load handling capability.
Specifications
[2SC3294]
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
* : With Zener diode (60±10V)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
50*
50*
6
3
6
0.6
25
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.5A
VCE=5V, IC=1.5A
IC=1.5A, IB=6mA
IC=1.5A, IB=6mA
Ratings
min typ
1000
4000
180
1.0
max
10
2
1.5
2.0
Unit
µA
mA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/90595MO/D251MH/4217TA/D174MW, TS 8-6055 No.1422–1/3


Sanyo Electric Components Datasheet

2SC3294 Datasheet

NPN Planar Silicon Transistor

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Inductive Load Handling Capability
Es/b Test Circuit
2SC3294
Symbol
Conditions
V(BR)CBO
V(BR)CEO
Es/b
IC=0.1mA, IE=0
IC=1mA, RBE=
L=100mH, RBE=100
Ratings
min typ
50 60
50 60
30
max
70
70
Unit
V
V
mJ
No.1422–2/3


Part Number 2SC3294
Description NPN Planar Silicon Transistor
Maker Sanyo Semicon Device
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2SC3294 Datasheet PDF






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