* Adoption of FBET process.
* High DC current gain.
* High VEBO (VEBO≥25V).
* High reverse hFE (150 typ).
* Small ON resistance [Ron=1Ω (IB=5mA)].

Features
* Adoption of FBET process.
* High DC current gain.
* High VEBO (VEBO≥25V).
* High reverse hFE.

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