* Large current (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High emitter-to-base voltage (VEBO≥15V).
* Large power type such as PC=1.5W when used withou
2SC4736
Sanyo Semicon Device
41.55 KB
Npn epitaxial planar silicon transistor.
Ordering number : EN3975A 2SC4736 SANYO Semiconductors DATA SHEET 2SC4736 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-.
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