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2SC4736 - NPN Epitaxial Planar Silicon Transistor

Features

  • Large current (IC=2A).
  • Adoption of MBIT process.
  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High emitter-to-base voltage (VEBO≥15V).
  • Large power type such as PC=1.5W when used without heatsink.
  • It is possible to make appliances more compact because its height on board is 9.5mm.
  • Effective in automatic inserting and counting stocked amount because of being provi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3975A 2SC4736 SANYO Semiconductors DATA SHEET 2SC4736 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emitter-to-base voltage (VEBO≥15V). • Large power type such as PC=1.5W when used without heatsink. • It is possible to make appliances more compact because its height on board is 9.5mm. • Effective in automatic inserting and counting stocked amount because of being provided for radial taping.
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