2SC4736 transistor equivalent, npn epitaxial planar silicon transistor.
* Large current (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5.
Features
* Large current (IC=2A).
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
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