2SC5069 Datasheet - Sanyo Semicon Device

NPN TRANSISTOR

* High current capacity.

* Adoption of MBIT process.

* High DC current gain.

* Low collector-to-emitter saturation voltage.

* High VEBO. Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Rati

2SC5069

Sanyo Semicon Device

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Npn transistor.

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2SC5069 NPN TRANSISTOR Sanyo Semicon Device

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