* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 26.0 20.7 1.75 2.9 1.2 1 5.45 2 3 5.45 0.6 3.0 1.0 2.0 3.1 Specifications Absolute
2SC5303
Sanyo Semicon Device
40.87 KB
Npn transistor.
Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
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