* Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collecto
2SC6144SG Datasheet (312.33 KB)
2SC6144SG
Sanyo Semicon Device
312.33 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENA1800 2SC6144SG SANYO Semiconductors DATA SHEET 2SC6144SG Applications NPN Epitaxial Planar Silicon Transistor Hig.
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