Datasheet Details
| Part number | 2SC6144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC6144-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SC6144 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC6144-INCHANGE.pdf |
|
|
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·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO IC ICM IB PC Tj Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Max.Junction Temperature Tstg Storage Ttemperature Range 50 V 5 V 10 A 13 A 2 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5 ℃/W 2SC6144 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 300mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC6144 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
|
2SC6144SG | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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