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2SC6144 - NPN Transistor

General Description

Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAX

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO IC ICM IB PC Tj Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Max.