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2SC6144 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 60 50 5 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1149 www.DataSheet4U.com 2SC6144 SANYO Semiconductors DATA SHEET 2SC6144 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.