2SJ632 - P CHANNEL MOS SILICON TRANSISTOR

Sanyo Semicon Device

Datasheet Details

Part number	2SJ632
Manufacturer	Sanyo Semicon Device
File Size	64.14 KB
Description	P CHANNEL MOS SILICON TRANSISTOR
Datasheet	2SJ632_SanyoSemiconDevice.pdf

Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www. DataSheet4U. com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbo.

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Published: Jul 12, 2007 |