Full PDF Text Transcription for 2SJ632 (Reference)
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Ordering number : ENN7420 2SJ632 P-Channel Silicon MOSFET 2SJ632 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6...
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ons Features • • • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www.DataSheet4U.com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings -60 ±20 --2 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=2