2SJ630 - P-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

General-Purpose Switching Device.

2SJ630 p-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	2SJ630
Manufacturer	SANYO (now Panasonic)
File Size	64.28 KB
Description	P-Channel Silicon MOSFET
Datasheet	2SJ630 Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
2SJ632	P-Channel Silicon MOSFET
2SJ633	P-Channel Silicon MOSFET
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2SJ635	P-Channel Silicon MOSFET
2SJ608	Ultrahigh Speed Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0489 2SJ630 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --6 --24 1.5 3.