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2SJ632 - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www. DataSheet4U. com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbo.

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Other Datasheets by SANYO (now Panasonic)

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2SJ630 P-Channel Silicon MOSFET
2SJ633 P-Channel Silicon MOSFET
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2SJ608 Ultrahigh Speed Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7420 2SJ632 P-Channel Silicon MOSFET 2SJ632 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www.DataSheet4U.com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings -60 ±20 --2 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --8 1.5 3.