2SK1895
2SK1895 is N-Channel Silicon MOSFET manufactured by SANYO.
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- Low-voltage drive.
- Micaless package facilitating mounting.
Package Dimensions unit:mm
2063A
[2SK1895]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Conditions PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD Tc=25°C Tch Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on) RDS(on)
ID=1m A, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1m A VDS=10V, ID=8A ID=8A, VGS=10V ID=8A, VGS=4V
2.4 14.0
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings...