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Ordering number:ENN6103A
N-Channel Silicon MOSFET
2SK3120
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2062A
[2SK3120]
4.5 1.6 1.5
0.4 3 1.5 2 3.0 0.75
0.5 1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on a ceramic board (250mm2×0.8mm)
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings 30 ±20 2 8 3.5 1.
2SK3120 Datasheet
