2SK3666 - N-Channel Junction Silicon FET

Name: 2SK3666
SKU: 2SK3666-629604

Sanyo Semicon Device

The 2SK3666 by Sanyo Semicon Device is a N-Channel Junction Silicon FET. Below is the official datasheet preview.

Datasheet Details

Part number	2SK3666
Manufacturer	Sanyo Semicon Device
File Size	64.96 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK3666_SanyoSemiconDevice.pdf
Additional preview pages of the 2SK3666 datasheet.

Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current.

📁 2SK3666 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Nov 28, 2008 |