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2SK3666 - N-CHANNEL JUNCTIN SILICON FET

General Description

The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS.

The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Key Features

  • Low IGSS.
  • Low CRSS.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary N-CHANNEL JUNCTIN SILICON FET JFET  DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.  FEATURES * Low IGSS * Low CRSS  ORDERING INFORMATION Ordering Number 2SK3666G-AE3-R Note: Pin Assignment: A: Anode K: Cathode 2SK3666G-AE3-R (1)Packing Type (2)Package Type (3)Green Package  MARKING 3666G Package SOT-23 Pin Assignment 123 SDG Packing Tape Reel (1) R: Tape Reel (2) AE3: SOT-23 (3) G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co.