2SK3666
2SK3666 is N-CHANNEL JUNCTIN SILICON FET manufactured by Unisonic Technologies.
DESCRIPTION
The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS.
The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
- FEATURES
- Low IGSS
- Low CRSS
- ORDERING INFORMATION
Ordering Number
2SK3666G-AE3-R Note: Pin Assignment: A: Anode K: Cathode
2SK3666G-AE3-R
(1)Packing Type (2)Package Type (3)Green Package
- MARKING
3666G
Package SOT-23
Pin Assignment 123 SDG
Packing Tape Reel
(1) R: Tape Reel (2) AE3: SOT-23 (3) G: Halogen Free and Lead Free
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QW-R206-109.a
Preliminary
JFET
- ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Drain Voltage
VDSS VGDS
30 -30
Gate Current Drain Current
Continuous
IG ID
10 m A 10 m A
Power Dissipation Junction Temperature
PD 200 m W TJ 150 °C
Storage Temperature Range
TSTG
-55~+150...
