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2SK3666 Datasheet N-channel Junction Silicon Fet

Manufacturer: SANYO (now Panasonic)

Overview: Ordering number : EN8158A 2SK3666 2SK3666 Applicatins www.DataSheet4U.com • N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Key Features

  • Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo 2SK3666 N-Channel JFET ON Semiconductor
Unisonic Technologies Logo 2SK3666 N-CHANNEL JUNCTIN SILICON FET Unisonic Technologies

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