2SK3666 Datasheet | SANYO

Features - - Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Symbol V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss RDS(on) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1k Hz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10m V, VGS=0V Ratings min --30 --1.0 --0.18 0.6- 3.0 6.5 4 1.1 200 --0.95 --2.2 6.0- typ max Unit V n A V m A m S p F p F Ω - : The 2SK3666 is classified by IDSS as follows : (unit : m A). Rank 2 3 4 IDSS 0.6 to 1.5 1.2 to 3.0 2.5 to 6.0 Marking : JK Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor pany TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805GM IM MS...