Datasheet Details
| Part number | 2SK3666 |
|---|---|
| Manufacturer | SANYO (now Panasonic) |
| File Size | 64.96 KB |
| Description | N-Channel Junction Silicon FET |
| Datasheet |
 2SK3666 Datasheet
|
|
|
Key Features
- Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current.