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Sanyo Electric Components Datasheet

2SK4094 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA0523
2SK4094
SANYO Semiconductors
DATA SHEET
2SK4094
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=200µH, IAV=70A
*2 L200µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K4094
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
Ratings
60
±20
100
400
1.75
90
150
--55 to +150
850
70
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
60
1.2
45
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
75 S
3.8 5.0 m
4.9 7.0 m
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QA SY IM TC-00000295 No. A0523-1/5


Sanyo Electric Components Datasheet

2SK4094 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7507-002
10.2
5.1
3.6
2SK4094
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=100A
VDS=30V, VGS=10V, ID=100A
VDS=30V, VGS=10V, ID=100A
IS=100A, VGS=0V
4.5
1.3
Ratings
min typ max
Unit
12500
pF
1200
pF
950 pF
80 ns
630 ns
860 ns
750 ns
220 nC
30 nC
55 nC
1.0 1.2 V
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=50A
RL=0.6
D VOUT
2SK4094
P.G 50S
Avalanche Resistance Test Circuit
50
L
10V
0V
50
2SK4094
VDD
No. A0523-2/5


Part Number 2SK4094
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
Total Page 5 Pages
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