2SK4094 - N-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=3.8mΩ (typ. ).
Input capacitance Ciss=12500pF (typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=30V, L=200μH, IAV=70A (Fig.1).

2SK4094 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK4094
Manufacturer	onsemi
File Size	207.71 KB
Description	N-Channel Power MOSFET
Datasheet	2SK4094 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET 60V, 100A, 5mΩ, TO-220-3L http://onsemi.com Features • ON-resistance RDS(on)1=3.8mΩ (typ.) • Input capacitance Ciss=12500pF (typ.) • 4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 100 400 1.75 90 150 --55 to +150 850 70 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.