2SK4096LS - N-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)=0.65Ω (typ. ).
10V drive.
Input capacitance Ciss=600pF Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
1 IDpack.
2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
3 8A 7.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 32 A Allowable.

2SK4096LS n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK4096LS
Manufacturer	onsemi
File Size	183.59 KB
Description	N-Channel Power MOSFET
Datasheet	2SK4096LS Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA0774C 2SK4096LS N-Channel Power MOSFET 500V, 8A, 850mΩ, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.65Ω (typ.) • 10V drive • Input capacitance Ciss=600pF Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 8A 7.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 32 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.