* Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0.1 1 2 0.5 0.5 1.
30A01S
Sanyo Semicon Device
54.30 KB
Pnp transistor.
www.DataSheet4U.com Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applicat.
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