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30A01S - PNP Transistor

Features

  • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2106A [30A01S] 0.3 0.75 0.6 Low-frequency power amplifier, muting circuit. Features • • • • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.8 0.4 1.6 3 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.
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