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5LN02C - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2091A [5LN02C] 0.5 0.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Sourse Voltage Drain Current(DC) Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6415 5LN02C N-Channel Silicon MOSFET 5LN02C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2091A [5LN02C] 0.5 0.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Sourse Voltage Drain Current(DC) Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.8 1.1 Ratings 50 ±10 0.2 0.8 0.
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