ATP214 Datasheet | SANYO

Features - - N-Channel Silicon MOSFET General-Purpose Switching Device Applications - - ON-resistance RDS(on)1=6.2mΩ(typ.) 4V drive Input Capacitance Ciss=4850p F(typ.) Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) - 1 Avalanche Current - 2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 75 225 60 150 --55 to +150 94 38 Unit V V A A W °C °C m J A Note : - 1 VDD=15V, L=100μH, IAV=38A - 2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information - Package : ATPAK - JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking LOT No. Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 3 http://semicon.sanyo./en/network 70710PA TK IM TC-00002343 No. A1712-1/4 Datasheet pdf - http://..net/ .Data Sheet.co.kr Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1m A, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=38A ID=38A, VGS=10V ID=19A, VGS=4.5V ID=10A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See...