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Sanyo Electric Components Datasheet

ATP218 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8970
ATP218
SANYO Semiconductors
DATA SHEET
ATP218
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=2.9mΩ(typ.)
2.5V drive
Input Capacitance Ciss=6600pF(typ.)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=15V, L=100μH, IAV=50A
*2 L100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
30
±10
100
300
60
150
--55 to +150
235
50
Unit
V
V
A
A
W
°C
°C
mJ
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP218
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
51111PA TKIM TC-00002592 No.8970-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ATP218 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ATP218
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=4.5V
ID=25A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=15V, VGS=4.5V, ID=100A
VDS=15V, VGS=4.5V, ID=100A
VDS=15V, VGS=4.5V, ID=100A
IS=100A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=50A
RL=0.3Ω
D VOUT
ATP218
P.G 50Ω S
min
30
Ratings
typ
0.5
260
2.9
4.0
6600
780
600
88
960
340
320
70
20
14
0.91
max
1
±10
1.3
3.8
5.6
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ID -- VDS
100
Tc=25°C
90 2.0V
80
70
60 1.8V
50
40
30
20
10 VGS=1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Drain-to-Source Voltage, VDS -- V IT16418
150
VDS=10V
120
ID -- VGS
90
60
30
0
0
0.5 1.0 1.5 2.0
Gate-to-Source Voltage, VGS -- V
2.5
IT16419
No.8970-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ATP218
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
PDF Download

ATP218 Datasheet PDF





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