B631K - 2SB631K

Features

High breakdown voltage VCEO 100/120V, High current 1A.
Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature S.

Sanyo Semicon Device

Datasheet Details

Part number	B631K
Manufacturer	Sanyo Semicon Device
File Size	155.39 KB
Description	2SB631K
Datasheet	B631K Datasheet
Additional preview pages of the B631K datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

Published: Apr 7, 2008 |