Datasheet4U Logo Datasheet4U.com

C2910 - 2SC2910

Features

  • Adoption of FBET process.
  • High breakdown voltage.
  • Excellent linearity of hFE and small Cob.
  • Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 6.0 3.0 14.0 8.5 0.5 0.6 0.5 0.5 ( ) : 2SA1208 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

📥 Download Datasheet

Datasheet preview – C2910

📁 Similar Datasheet

  • C2912 - Epitaxial Planar Silicon Transistor (Sanyo)
  • C29-F100 - Service Manual (Hitachi)
  • C2901 - 2SC2901 (NEC)
  • C2904 - 2SC2904 (ASI)
  • C2905 - 2SC2905 (Mitsubishi Electronics)
  • C2921 - 2SC2921 (Sanken)
  • C2922 - 2SC2922 (Sanken electric)
  • C2923 - 2SC2923 (SavantIC)
  • C2923 - Silicon PNP Transistor (Panasonic)
  • C2925 - 2SC2925 (Panasonic)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 6.0 3.0 14.0 8.5 0.5 0.6 0.5 0.
Published: |