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C2909 - 2SC2909

Datasheet Summary

Features

  • Adoption of FBET process.
  • High breakdown voltage.
  • Excellent linearity of hFE and small Cob.
  • Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage T.

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Datasheet Details

Part number C2909
Manufacturer Sanyo Semicon Device
File Size 117.79 KB
Description 2SC2909
Datasheet download datasheet C2909 Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.
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