PNP/NPN Epitaxial Planar Silicon Transistors
High-VEBO, AF Amp Applications
· High VEBO.
· Wide ASO and highly resistant to breakdown.
( ) : 2SA1246
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)10V, IC=0
DC Current Gain
hFE VCE=(–)6V, IC=(–)1mA
fT VCE=(–)6V, IC=(–)1mA
Common base Output Capacitance
Cob VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)50mA, IB=(–)5mA
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.
hFE 100 to 200 140 to 280 200 to 400 280 to 560
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
–55 to +150
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4