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Sanyo Electric Components Datasheet

C3114 Datasheet

2SC3114

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Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
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High-VEBO, AF Amp Applications
Features
· High VEBO.
· Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm
2003B
[2SA1246/2SC3114]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)10V, IC=0
DC Current Gain
hFE VCE=(–)6V, IC=(–)1mA
Gain-Bandwidth Product
fT VCE=(–)6V, IC=(–)1mA
Common base Output Capacitance
Cob VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)50mA, IB=(–)5mA
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)60
(–)50
(–)15
(–)150
(–)300
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
min
100*
Ratings
typ
max
Unit
(–)0.1 µA
(–)0.1 µA
560*
100 MHz
(4.2)3.0
pF
(–)0.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4


Sanyo Electric Components Datasheet

C3114 Datasheet

2SC3114

No Preview Available !

2SA1246/2SC3114
Continued from preceding page.
Parameter
Symbol
Conditions
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=(–)1mA, RBE=
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=(–)10µA, IC=0
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min
(–)60
(–)50
(–)15
Ratings
typ
max
Unit
V
V
V
--50
2SA1246
From above
--40 --500µA
--450µA
--400µA
--350µA
--30 --300µA
--20
--10
IC -- VCE
--250µA
--200µA
--150µA
--100µA
--50µA
IB=0
00
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE – V ITR03038
--20 IC -- VCE
--60µA
--16 --50µA
2SA1246
--40µA
--12 --30µA
--8 --20µA
--10µA
--4
0
0
--100
--80
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03040
IC -- VBE
2SA1246
VCE=--6V
Pulse
--60
--40
--20
00
--0.4
--0.8
--1.2
--1.6
Base-to-Emitter Voltage, VBE – V ITR03042
50
2SC3114
From above
40 500µA
450µA
400µA
350µA
30 300µA
20
10
IC -- VCE
250µA
200µA
150µA
100µA
50µA
IB=0
00 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE – V ITR03039
20
70µA
IC -- VCE
2SC3114
60µA
16
50µA
12 40µA
30µA
8
20µA
4 10µA
00
100
80
IB=0
10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03041
IC -- VBE
2SC3114
VCE=6V
Pulse
60
40
20
0
0 0.4 0.8 1.2 1.6
Base-to-Emitter Voltage, VBE – V ITR03043
No.1047-2/4


Part Number C3114
Description 2SC3114
Maker Sanyo Semicon Device
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C3114 Datasheet PDF





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