Datasheet Details
| Part number | C3112 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 487.09 KB |
| Description | 2SC3112 |
| Datasheet | C3112_ToshibaSemiconductor.pdf |
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Overview: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications • • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO =.
| Part number | C3112 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 487.09 KB |
| Description | 2SC3112 |
| Datasheet | C3112_ToshibaSemiconductor.pdf |
|
|
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| Part Number | Description |
|---|---|
| C3113 | 2SC3113 |
| C3120 | 2SC3120 |
| C3123 | 2SC3123 |
| C3148 | 2SC3148 |