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C3114 - 2SC3114

Key Features

  • High VEBO.
  • Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteri.

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📁 Similar Datasheet

Part Number Description Manufacturer
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C3101 2SC3101 Mitsubishi Electronics

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3117 2SC3117
C3143 2SC3143
C3149 2SC3149
C3150 2SC3150

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 www.datasheet4u.com High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.