C3807
Features
- Large current capacity (IC=2A).
- Adoption of MBIT process.
- High DC current gain (h FE=800 to 3200).
- Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
- High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
B : Base C : Collector E : Emitter SANYO : TO-126LP
Conditions
Ratings 30 25 15 2 4 1.2 15 150
- 55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 f T Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500m A VCE=5V, IC=1A VCE=10V, IC=50m A VCB=10V, f=1MHz 800 600 260 27 MHz p F 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA...
