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C5303 - 2SC5303

Features

  • High speed (tf=100ns typ).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature.

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Full PDF Text Transcription

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Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.75 2.9 1.2 12 3 5.45 5.45 0.6 5.45 5.45 1.0 3.
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