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Sanyo Electric Components Datasheet

CPH3341 Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device

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Ordering number : ENA0091
CPH3341
CPH3341
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--30
±20
--5
--20
1.2
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : YQ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2.5A
ID=--2.5A, VGS=--10V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--30
--1.2
3.7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
6.2 S
35 45 m
67 94 m
1115
pF
215 pF
191 pF
15 ns
22 ns
98 ns
55 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92005PE MS IM TB-00001596 No. A0091-1/4


Sanyo Electric Components Datasheet

CPH3341 Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device

No Preview Available !

CPH3341
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, VGS=--10V, ID=--5A
VDS=--10V, VGS=--10V, ID=--5A
VDS=--10V, VGS=--10V, ID=--5A
IS=--5A, VGS=0V
Ratings
min typ max
Unit
21.8
nC
3.3 nC
4.9 nC
--0.85
--1.2 V
Package Dimensions
unit : mm
7015-004
0.4
3
0.15
0.05
12
1.9
2.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --2.5A
RL=6
D VOUT
CPH3341
P.G 50S
ID -- VDS
--5
--4
--3
--2 VGS= --3V
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT10147
RDS(on) -- VGS
140
Ta=25°C
120
100 ID= --1.0A
--2.5A
80
60
40
20
0
0 --2 --4 --6 --8 --10 --12 --14
Gate-to-Source Voltage, VGS -- V IT10149
--7
VDS= --10V
--6
ID -- VGS
--5
--4
--3
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT10148
RDS(on) -- Ta
120
100
80 ID= --1.0A, VGS= --4V
60
40 ID= --2.5A, VGS= --10V
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10247
No. A0091-2/4


Part Number CPH3341
Description P-Channel Silicon MOSFET General-Purpose Switching Device
Maker Sanyo Semicon Device
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CPH3341 Datasheet PDF





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