CPH5852
Key Features
- MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
- posite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS]
- Low ON-resistance
- Ultrahigh-speed switching
- 4V drive [SBD]
- Short reverse recovery time
- Low forward voltage Specifications
