The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Ordering number : ENA0687
CPH5856
SANYO Semiconductors
DATA SHEET
CPH5856
Features
•
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
DC / DC converters.
Features
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Junction temperature 150°C guarantee.