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Sanyo Electric Components Datasheet

CPH5863 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA0465
CPH5863
SANYO Semiconductors
DATA SHEET
CPH5863
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter applications.
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
2.5V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Low reverse current.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : YR
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1000mm20.8mm) 1unit
Ratings
Unit
30 V
±12 V
2.5 A
10 A
0.9 W
150 °C
--55 to +125
°C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TI IM TC-00000875 No. A0465-1/5


Sanyo Electric Components Datasheet

CPH5863 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

CPH5863
Continued from preceding page.
Parameter
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF
IR
C
trr
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.3A
ID=1.3A, VGS=4V
ID=0.7A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
IS=2.5A, VGS=0V
IR=300µA
IF=700mA
VR=15V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
30
35
700
5
--55 to +125
--55 to +125
V
V
mA
A
°C
°C
Ratings
min typ max
Unit
30
0.4
1.9 3.2
95
120
270
40
35
10
40
39
38
3.7
0.65
1
0.9
V
1 µA
±10 µA
1.3 V
S
125 m
170 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
30 V
0.55
V
80 µA
25 pF
10 ns
Package Dimensions
unit : mm (typ)
7017A-005
2.9
5 43
1
0.95
2
0.4
0.15
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5 43
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No. A0465-2/5


Part Number CPH5863
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH5863 Datasheet PDF





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