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Sanyo Electric Components Datasheet

CPH6002 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENA0262
CPH6002
SANYO Semiconductors
DATA SHEET
CPH6002
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Power
Amplifier Applications
Features
High fT (fT=3.0GHz typ).
Large current (IC=200mA).
Large collector dissipation (800mW max).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Marking : GB
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
Conditions
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
40
30
2
200
800
150
--55 to +150
Conditions
VCB=20V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=50mA
VCB=5V, f=1MHz
VCB=5V, f=1MHz
Ratings
min typ
100
3.0
2.7
1.9
max
1.0
5.0
200
Unit
V
V
V
mA
mW
°C
°C
Unit
µA
µA
GHz
pF
pF
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 42806AB MS IM TB-00002247 No. A0262-1/3


Sanyo Electric Components Datasheet

CPH6002 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

Package Dimensions
unit : mm
7018-002
0.4
6 54
0.15
0.05
12
0.95
2.9
3
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
CPH6002
IC -- VCE
90
80 500µA
70 400µA
60
300µA
50
40
200µA
30
20 100µA
10
0 IB=0µA
0 5 10 15 20
Collector-to-Emitter Voltage, VCE -- V
VCE(sat) -- IC
600
IC / IB=10
25
IT10484
500
400
300
200
100
0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT10486
hFE -- IC
160
VCE=5V
140
120
100
80
60
40
20
0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT10485
S21e2 -- IC
25
VCE=5V
20 f=200MHz
15
500MHz
10
5
0
1.0 2 3 5 7 10
2 3 5 7 100
23
Collector Current, IC -- mA
IT10487
No. A0262-2/3


Part Number CPH6002
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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CPH6002 Datasheet PDF





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