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CPH6001 - High-Frequency Low-Noise Amplifier Applications

Key Features

  • High gain : S21e =11dB typ (f=1GHz).
  • High cutoff frequency : fT=6.7GHz typ.
  • Small and slim 6-pin package.
  • Large allowable collector dissipation (800mW max). 2 Package Dimensions unit:mm 2146A [CPH6001] 0.2 0.05 1.6 2.8 2.9 6 5 4 0.6 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =11dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. · Small and slim 6-pin package. · Large allowable collector dissipation (800mW max). 2 Package Dimensions unit:mm 2146A [CPH6001] 0.2 0.05 1.6 2.8 2.9 6 5 4 0.6 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.