CPH6001A - RF Transistor

onsemi

Key Features

High gain : |S21e|2=11dB typ (f=1GHz).
High cut-off frequency : fT=6.7GHz typ.
Small and slim 6-pin package.
Large allowable collector dissipation (800mW max) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic su.

CPH6001A rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	CPH6001A
Manufacturer	onsemi
File Size	375.58 KB
Description	RF Transistor
Datasheet	CPH6001A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1079A CPH6001A RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single CPH6 http://onsemi.com Features • High gain : |S21e|2=11dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ • Small and slim 6-pin package • Large allowable collector dissipation (800mW max) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 100 800 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.