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Ordering number : ENN7212
CPH6318
P-Channel Silicon MOSFET
CPH6318
High-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2151A
[CPH6318]
6 5 4
0.6
0.05
Low ON-resistance. High-speed switching. 1.8V drive.
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW≤5s Conditions
0.4
0.7 0.9
0.2
3 0.95
0.6
1.6
2.8
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings --12 ±8 --6 --24 1.6 2.
CPH6318 Datasheet
