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Ordering number : ENN7017
CPH6313
P-Channel Silicon MOSFET
CPH6313
High-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2151A
[CPH6315]
6 5 4
0.6 0.2
Low ON-resistance. High-speed switching. 2.5V drive.
2.9
0.15
0.05
1.6 2.8
1
2
0.4
Specifications
Absolute Maximum Ratings a t Ta=25 °C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings -20 ± 10 --4 -16 1.
CPH6313 Datasheet
