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CPH6316 - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • High-speed switching.
  • 4V drive. Package Dimensions unit : mm 2151A [CPH6316] 2.9 0.15 6 54 0.05 0.2 0.6 1.6 0.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 4V drive. Package Dimensions unit : mm 2151A [CPH6316] 2.9 0.15 6 54 0.05 0.2 0.6 1.6 0.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings --30 ±20 --3 --12 1.