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Ordering number : ENA1200
CPH6340
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
CPH6340
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. High-speed switching. 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --45 ±20 --4 --16 1.