CPH6355 Datasheet | SANYO

Features - - - P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=130mΩ(typ.) 4V drive Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Conditions Ratings --30 ±20 -3 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7018A-003 2.9 0.6 6 5 4 0.2 0.15 Product & Package Information - Package : CPH6 - JEITA, JEDEC : SC-74, SOT-26, SOT-457 - Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking LOT No. 2 0.95 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Electrical Connection 1, 2, 5, 6 4 http://semicon.sanyo./en/network 81011PE TKIM TC-00002635 No.8933-1/4 Datasheet pdf - http://..net/ .Data Sheet.co.kr Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--3A, VGS=0V VDS=--15V, VGS=--10V, ID=--3A See specified Test Circuit. VDS=--10V, f=1MHz Conditions -1m A, VGS=0V ID=-30V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1m A VDS=-10V, ID=-1.5A VDS=-1.5A, VGS=-10V ID=-0.5A, VGS=-4.5V ID=-0.5A, VGS=-4V ID=Ratings min --30 -1 ±10 --1.2 2.3 130 197 223 172 51 36 4.6 6.6 19.4 11.4 3.9 0.6 0.8...