Ordering number : ENN8106
N-Channel Silicon MOSFET
CPH6612 General-Purpose Switching Device
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
• Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Marking : FY
125 165 mΩ
165 235 mΩ
230 350 mΩ
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2504 TS IM TB-00000652 No.8106-1/4