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Sanyo Electric Components Datasheet

CPH6612 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8106
CPH6612
N-Channel Silicon MOSFET
CPH6612 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Ratings
20
±12
2
8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FY
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
20
0.4
1.4
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
2.4 S
125 165 m
165 235 m
230 350 m
120 pF
31 pF
25 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2504 TS IM TB-00000652 No.8106-1/4


Sanyo Electric Components Datasheet

CPH6612 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
CPH6612
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
min typ max
Unit
9 ns
29 ns
18 ns
22 ns
2.3 nC
0.5 nC
0.75
nC
0.94
1.2 V
Package Dimensions
unit : mm
2238
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
Electrical Connection
654
1 23
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1A
RL=10
D VOUT
CPH6612
P.G 50S
No.8106-2/4


Part Number CPH6612
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH6612 Datasheet PDF






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