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Sanyo Electric Components Datasheet

CPH6613 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8182
CPH6613
CPH6613
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with two MOSFETs contained in a single package facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Ratings
20
±12
2.5
10
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FZ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=0.8A, VGS=2.5V
ID=0.4A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
20
0.4
2.0
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.4 S
70 95 m
95 135 m
130 198 m
270 pF
60 pF
53 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505PE TS IM TB-00001086 No.8182-1/4


Sanyo Electric Components Datasheet

CPH6613 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2238
CPH6613
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
IS=2.5A, VGS=0
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
Ratings
min typ max
Unit
10 ns
44 ns
37 ns
38 ns
4.0 nC
0.6 nC
1.9 nC
0.91
1.2 V
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1.5A
RL=6.67
D VOUT
CPH6613
P.G 50S
Electrical Connection
6 54
1 23
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
No.8182-2/4


Part Number CPH6613
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH6613 Datasheet PDF






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