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Sanyo Electric Components Datasheet

CPH6616 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8107
CPH6616
CPH6616
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Excellent ON-resistance characteristic.
Best suited for load switches.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WC
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
30
±20
2.5
10
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
30
1.2
1.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
2.0 S
79 105 m
150 210 m
187 pF
40 pF
33 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1004PE TS TB-00000655 No.8107-1/4


Sanyo Electric Components Datasheet

CPH6616 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

CPH6616
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
VDS=10V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0
Ratings
min typ max
Unit
7.8 ns
18.5
ns
22 ns
12 ns
5.2 nC
1 nC
0.97
nC
0.9 1.2 V
Package Dimensions
unit : mm
2238
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
Electrical Connection
6 54
1 23
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=1.5A
RL=10
D VOUT
P.G 50S
No.8107-2/4


Part Number CPH6616
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH6616 Datasheet PDF






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